Ikonic, Z., Lazic, I., Milanovic, V., Kelsall, R.W., Indjin, D. and Harrison, P. (2006) n-Si/SiGe quantum cascade structures for THz emission. Journal of Luminescence, 121 (2). pp. 311-314. ISSN 0022-2313Full text available as:
Available under licence : See the attached licence file.
In this work we report on modelling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.
|Copyright, Publisher and Additional Information:||Copyright © 2006 Elsevier B.V. This is an author produced version of a paper published in 'Journal of Lumninescence'|
|Institution:||The University of Leeds|
|Academic Units:||The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)|
|Depositing User:||Repository Officer|
|Date Deposited:||01 Nov 2006|
|Last Modified:||09 Jun 2014 13:21|
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