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n-Si/SiGe quantum cascade structures for THz emission

Ikonic, Z., Lazic, I., Milanovic, V., Kelsall, R.W., Indjin, D. and Harrison, P. (2006) n-Si/SiGe quantum cascade structures for THz emission. Journal of Luminescence, 121 (2). pp. 311-314. ISSN 0022-2313

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In this work we report on modelling the electron transport in n-Si/SiGe structures. The electronic structure is calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is described via scattering between quantized states, using the rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbour periods. The acoustic phonon, optical phonon, alloy and interface roughness scattering are taken in the model. The calculated U/I dependence and gain profiles are presented for a couple of QC structures.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2006 Elsevier B.V. This is an author produced version of a paper published in 'Journal of Lumninescence'
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 01 Nov 2006
Last Modified: 09 Jun 2014 13:21
Published Version: http://dx.doi.org/10.1016/j.jlumin.2006.08.049
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: 10.1016/j.jlumin.2006.08.049
URI: http://eprints.whiterose.ac.uk/id/eprint/1672

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