Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications

Lim, L.W. orcid.org/0000-0002-8039-5406, Patil, P., Marko, I. et al. (5 more authors) (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology, 35 (9). 095031. ISSN 0268-1242

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Copyright, Publisher and Additional Information: © 2020 The Author(s).Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (http://creativecommons.org/licenses/by/4.0/) . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: Indium Gallium Arsenide; photodiodes; low temperature MBE growth
Dates:
  • Accepted: 30 June 2020
  • Published (online): 13 August 2020
  • Published: September 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research CouncilEP/N020715/1
Depositing User: Symplectic Sheffield
Date Deposited: 03 Jul 2020 07:01
Last Modified: 29 Oct 2021 14:39
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6641/aba167

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