Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications

Lim, L.W. orcid.org/0000-0002-8039-5406, Patil, P., Marko, I. et al. (5 more authors) (2020) Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications. Semiconductor Science and Technology. ISSN 0268-1242

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2020 IOP Publishing Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (http://creativecommons.org/licenses/by/3.0).
Keywords: Indium Gallium Arsenide; photodiodes; low temperature MBE growth
Dates:
  • Accepted: 30 June 2020
  • Published (online): 30 June 2020
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research CouncilEP/N020715/1
Depositing User: Symplectic Sheffield
Date Deposited: 03 Jul 2020 07:01
Last Modified: 03 Jul 2020 07:01
Status: Published online
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6641/aba167

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