Off-state operation of a three terminal ionic FET for logic-in-memory

Song, X., Kumar, A. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2019) Off-state operation of a three terminal ionic FET for logic-in-memory. IEEE Journal of the Electron Devices Society. ISSN 2168-6734

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 IEEE
Keywords: Tantalum oxide; zinc oxide; oxygen vacancies; memory TFTs and compute-in-memory
Dates:
  • Published: 12 September 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENIAC296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 16 Oct 2019 11:35
Last Modified: 16 Oct 2019 11:38
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: https://doi.org/10.1109/jeds.2019.2941076

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