Development of GaN transducer and on-chip concentrator for galvanic current sensing

Faramehr, S., Poluri, N., Igic, P. et al. (2 more authors) (2019) Development of GaN transducer and on-chip concentrator for galvanic current sensing. IEEE Transactions on Electron Devices. ISSN 0018-9383

Abstract

Metadata

Authors/Creators:
  • Faramehr, S.
  • Poluri, N.
  • Igic, P.
  • Jankovic, N.
  • De Souza, M.M.
Copyright, Publisher and Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Concentrator; gallium nitride (GaN); magnetic high electron mobility transistors (MagHEMTs)
Dates:
  • Accepted: 18 August 2019
  • Published (online): 30 August 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research Council (EPSRC)UNSPECIFIED
Depositing User: Symplectic Sheffield
Date Deposited: 06 Sep 2019 09:07
Last Modified: 06 Sep 2019 09:07
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: https://doi.org/10.1109/ted.2019.2936687

Download

Accepted Version


Embargoed until: 30 August 2020

Filename: Development of GaN transducer and on-chip concentrator for galvanic current sensing IEEE TED.pdf

Request a copy

Share / Export

Statistics