Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers

Alt, A., Hirshy, H., Jiang, S. et al. (6 more authors) (2019) Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers. IEEE Transactions on Microwave Theory and Techniques, 67 (7). pp. 2495-2504. ISSN 0018-9480

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Broadband; envelope tracking (ET); HEMTs; power amplifiers (PAs); transistor technology; Gain; MODFETs; Gallium nitride; Gain measurement; Voltage measurement
Dates:
  • Published (online): 31 May 2019
  • Published: July 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research Council (EPSRC)EP/N015878/1
Depositing User: Symplectic Sheffield
Date Deposited: 05 Aug 2019 08:54
Last Modified: 05 Aug 2019 08:54
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: https://doi.org/10.1109/tmtt.2019.2916404
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