Highly strained III-V-V coaxial nanowire quantum wells with strong carrier confinement

Zhang, Y., Davis, G., Fonseka, H.A. et al. (11 more authors) (2019) Highly strained III-V-V coaxial nanowire quantum wells with strong carrier confinement. ACS Nano, 13 (5). pp. 5931-5938. ISSN 1936-0851

Abstract

Metadata

Authors/Creators:
  • Zhang, Y.
  • Davis, G.
  • Fonseka, H.A.
  • Velichko, A.
  • Gustafsson, A.
  • Godde, T.
  • Saxena, D.
  • Aagesen, M.
  • Parkinson, P.W.
  • Gott, J.A.
  • Huo, S.
  • Sanchez, A.M.
  • Mowbray, D.J.
  • Liu, H.
Copyright, Publisher and Additional Information: © 2019 American Chemical Society. This is an open access article published under a Creative Commons Attribution ((http://creativecommons.org/licenses/by/4.0/)) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
Keywords: nanowire; III−V−V; quantum well; carrier collection; carrier confinement; laser
Dates:
  • Accepted: 8 May 2019
  • Published (online): 8 May 2019
  • Published: 28 May 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Science Research Council (EPSRC)EP/P000967/1
Depositing User: Symplectic Sheffield
Date Deposited: 30 Jul 2019 10:59
Last Modified: 31 Jul 2019 07:47
Status: Published
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsnano.9b01775

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