Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes

Zhang, Y., Smith, R.M. orcid.org/0000-0002-7718-7796, Jiu, L. et al. (2 more authors) (2019) Confocal photoluminescence investigation to identify basal stacking fault’s role in the optical properties of semi-polar InGaN/GaN lighting emitting diodes. Scientific Reports, 9 (1). 9735. ISSN 2045-2322

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Copyright, Publisher and Additional Information: © 2019 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Dates:
  • Accepted: 26 June 2019
  • Published (online): 5 July 2019
  • Published: December 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 15 Jul 2019 14:45
Last Modified: 15 Jul 2019 14:45
Status: Published
Publisher: Springer Nature Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1038/s41598-019-46292-8
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