A p-channel GaN heterostructure tunnel FET with high ON/OFF current ratio

Kumar, A. orcid.org/0000-0002-8288-6401 and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2019) A p-channel GaN heterostructure tunnel FET with high ON/OFF current ratio. IEEE Transactions on Electron Devices. ISSN 0018-9383

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Band-to-band tunneling (BBT); heterojunction tunnel FETs (TFETs); III-nitrides; subthreshold swing (SS); tunnel field-effect transistor; tunneling resistance; wide bandgap materials
Dates:
  • Accepted: 2 May 2019
  • Published (online): 23 May 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)UNSPECIFIED
ENIAC296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 29 May 2019 10:31
Last Modified: 29 May 2019 10:37
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: https://doi.org/10.1109/ted.2019.2915768

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