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Uncoupled excitons in semiconductor microcavities detected in resonant Raman scattering

Stevenson, R.M., Astratov, V.N., Skolnick, M.S., Roberts, J.S. and Hill, G. (2003) Uncoupled excitons in semiconductor microcavities detected in resonant Raman scattering. Physical Review B: Condensed Matter and Materials Physics, 67 (8). 081301. ISSN 1098-0121

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Abstract

We present an outgoing resonant Raman-scattering study of a GaAs/AlGaAs based microcavity embedded in a p-i-n junction. The p-i-n junction allows the vertical electric field to be varied, permitting control of exciton-photon detuning and quenching of photoluminescence which otherwise obscures the inelastic light scattering signals. Peaks corresponding to the upper and lower polariton branches are observed in the resonant Raman cross sections, along with a third peak at the energy of uncoupled excitons. This third peak, attributed to disorder activated Raman scattering, provides clear evidence for the existence of uncoupled exciton reservoir states in microcavities in the strong-coupling regime.

Item Type: Article
Copyright, Publisher and Additional Information: © 2003 The American Physical Society. Reproduced in accordance with the publisher’s self-archiving policy.
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Repository Assistant
Date Deposited: 27 Jul 2006
Last Modified: 08 Feb 2013 16:49
Published Version: http://dx.doi.org/10.1103/PhysRevB.67.081301
Status: Published
Publisher: American Institute of Physics
Refereed: Yes
Identification Number: 10.1103/PhysRevB.67.081301
URI: http://eprints.whiterose.ac.uk/id/eprint/1462

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