Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies

Flores, S., Reyes, D.F., Braza, V. et al. (6 more authors) (2019) Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies. Applied Surface Science, 485. pp. 29-34. ISSN 0169-4332

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2019 Elsevier. This is an author produced version of a paper subsequently published in Applied Surface Science. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/).
Keywords: InAsBi; Segregation; Bismuthide; Exchange energies
Dates:
  • Accepted: 21 April 2019
  • Published (online): 22 April 2019
  • Published: 15 August 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ROYAL ACADEMY OF ENGINEERING (THE)RF/1516/15/43
Depositing User: Symplectic Sheffield
Date Deposited: 15 May 2019 11:43
Last Modified: 15 May 2019 11:43
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.apsusc.2019.04.188

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Filename: 2019_Flores_Final author version.pdf

Licence: CC-BY-NC-ND 4.0

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