Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Tsukahara, Makoto, Yamada, Michihiro, Naito, Takahiro et al. (4 more authors) (2019) Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts. Applied Physics Express. 033002. ISSN 1882-0786

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: ©2019 The Japan Society of Applied Physics
Keywords: Engineering,Physics and Astronomy
Dates:
  • Published: 1 March 2019
Institution: The University of York
Academic Units: The University of York > York Institute for Materials Research
The University of York > Faculty of Sciences (York) > Physics (York)
Depositing User: Pure (York)
Date Deposited: 17 Apr 2019 15:30
Last Modified: 29 Aug 2019 23:53
Published Version: https://doi.org/10.7567/1882-0786/ab0252
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.7567/1882-0786/ab0252
Related URLs:

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