Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs

Unni, V., Long, H.Y., Yan, H. et al. (3 more authors) (2018) Analysis of drain current saturation behaviour in GaN polarisation super junction HFETs. IET Power Electronics, 11 (14). pp. 2198-2203. ISSN 1755-4535

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2018 The Institution of Engineering and Technology. This is an author-produced version of a paper subsequently published in IET Power Electronics. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: gallium compounds; III-V semiconductors; current density; semiconductor device models; wide band gap semiconductors; power HEMT; drain current density; drain current saturation behaviour; saturation current; power device; short-circuit capability; gallium nitride; GaN polarisation super junction heterojunction field-effect transistors; power converter applications; PSJ HFET; physics-based 2D device simulations; GaN
Dates:
  • Accepted: 6 August 2018
  • Published (online): 5 October 2001
  • Published: 29 November 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 12 Apr 2019 10:52
Last Modified: 12 Apr 2019 12:14
Status: Published
Publisher: Institution of Engineering and Technology
Refereed: Yes
Identification Number: https://doi.org/10.1049/iet-pel.2018.5583
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