Conductance quantisation in patterned gate In0.75Ga0.25As structures up to 6  ×  (2e 2/h)

Gul, Y. orcid.org/0000-0003-2851-1374, Creeth, G., English, D. et al. (6 more authors) (2019) Conductance quantisation in patterned gate In0.75Ga0.25As structures up to 6  ×  (2e 2/h). Journal of Physics: Condensed Matter, 31 (10). 104002. ISSN 0953-8984

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Copyright, Publisher and Additional Information: © 2019 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in Journal of Physics: Condensed Matter. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: InGaAs material; Rashba effect; ballistic transport; spin-orbit coupling
Dates:
  • Accepted: 9 January 2019
  • Published (online): 9 January 2019
  • Published: 13 March 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 30 Jan 2019 13:06
Last Modified: 30 Jan 2019 13:06
Published Version: https://doi.org/10.1088/1361-648X/aafd05
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-648X/aafd05
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