Influence of growth kinetics on Sn incorporation in direct band gap Ge₁-xSnx nanowires

Doherty, J, Biswas, S, Saladukha, D et al. (5 more authors) (2018) Influence of growth kinetics on Sn incorporation in direct band gap Ge₁-xSnx nanowires. Journal of Materials Chemistry C, 6 (32). pp. 8738-8750. ISSN 2050-7526

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Copyright, Publisher and Additional Information: This journal is © The Royal Society of Chemistry 2018. This is an author produced version of a paper published in Journal of Materials Chemistry C. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 28 August 2018
  • Accepted: 24 July 2018
  • Published (online): 25 July 2018
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Chemical & Process Engineering (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 11 Dec 2018 12:49
Last Modified: 25 Jul 2019 00:43
Status: Published
Publisher: Royal Society of Chemistry
Identification Number: https://doi.org/10.1039/c8tc02423e

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