Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures

Albarkaty, KS, Kumi Barimah, E, Craig, C et al. (3 more authors) (2019) Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures. Applied Physics A: Materials Science and Processing, 125 (1). pp. 1-8. ISSN 0947-8396

Abstract

Metadata

Authors/Creators:
  • Albarkaty, KS
  • Kumi Barimah, E
  • Craig, C
  • Hewak, D
  • Jose, G
  • Chandrappan, J
Copyright, Publisher and Additional Information: © The Author(s) 2018. This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Keywords: Thin film, chalcogenide, gallium lanthanum sulphide, silicon, pulsed laser deposition, crystalline, photoluminescence, lifetime
Dates:
  • Published: January 2019
  • Accepted: 27 November 2018
  • Published (online): 5 December 2018
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Chemical & Process Engineering (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 07 Dec 2018 11:08
Last Modified: 07 Dec 2018 11:08
Status: Published
Publisher: Springer Verlag
Identification Number: https://doi.org/10.1007/s00339-018-2286-x
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