Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates

Bai, J., Jiu, L., Gong, Y. et al. (1 more author) (2018) Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates. Semiconductor Science and Technology, 33 (12). 125023. ISSN 0268-1242

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2018 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in Semiconductor Science and Technology. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: nonpolar GaN; overgrowth; patterning
Dates:
  • Accepted: 1 November 2018
  • Published (online): 1 November 2018
  • Published: 1 December 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/M003132/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/M015181/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)EP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 03 Dec 2018 11:54
Last Modified: 01 Nov 2019 01:39
Published Version: https://doi.org/10.1088/1361-6641/aaed93
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6641/aaed93
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