Electron energy loss spectroscopic profiling of semiconductor hetero- and nano-structures: theory, implementation, applications

Walther, T. orcid.org/0000-0003-3571-6263 (2003) Electron energy loss spectroscopic profiling of semiconductor hetero- and nano-structures: theory, implementation, applications. In: Cullis, A.G. and Midgley, P.A., (eds.) Microscopy of Semiconducting Materials 2003. Microscopy of Semiconducting Materials, 31 Mar - 03 Apr 2003, Cambridge, UK. CRC Press , pp. 27-32. ISBN 9781315895536

Abstract

The method of energy loss spectroscopic profiling (ELSP) in a transmission electron microscope is described, with emphasis on the implementation for a post-columnar energy filter and the optimisation of both energy and spatial resolution. Applications to thin film semiconductors (SiGe / Si, ZnMgSSe / ZnSe and Cd(Mn,Mg)Te / CdTe), to oxide layers (SrTiO3 / (La0.7Ca0.3)MnO3) and to nano-particles (LaPO4:Ce) demonstrate the potential of this technique for solving physical, chemical or technological problems related to diffusion and segregation of elements otherwise not readily accessible. Possible quantification procedures and recent results are presented.

Metadata

Authors/Creators:	Walther, T. https://orcid.org/0000-0003-3571-6263
Copyright, Publisher and Additional Information:	© 2003 CRC Press.
Keywords:	ELS; Microscope; Diffusion; Lengths; Shifts
Dates:	Published: 2003
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	02 Nov 2018 12:37
Last Modified:	19 Dec 2022 13:50
Status:	Published
Publisher:	CRC Press
Refereed:	Yes

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Electron energy loss spectroscopic profiling of semiconductor hetero- and nano-structures: theory, implementation, applications

Abstract

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