Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors

Al Baroot, A.F. and Grell, M. orcid.org/0000-0003-0714-2039 (2019) Comparing electron- and hole transporting semiconductors in ion sensitive water- gated transistors. Materials Science in Semiconductor Processing, 89. pp. 216-222. ISSN 1369-8001

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Copyright, Publisher and Additional Information: Crown Copyright © 2018 Elsevier. This is an author produced version of a paper subsequently published in Materials Science in Semiconductor Processing. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/).
Keywords: Water- gated thin film transistor; rrP3HT; Zinc oxide; Crown ether; Potassium
Dates:
  • Accepted: 19 September 2018
  • Published (online): 27 September 2018
  • Published: January 2019
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 05 Oct 2018 14:12
Last Modified: 27 Sep 2019 00:38
Published Version: https://doi.org/10.1016/j.mssp.2018.09.018
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.mssp.2018.09.018

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