Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices

Lazarov, Vlado orcid.org/0000-0002-4314-6865, Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209, Ghasemi, Arsham et al. (8 more authors) (2018) Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices. Physical Review B. 115304. ISSN 2469-9969

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Copyright, Publisher and Additional Information: ©2018 American Physical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
Dates:
  • Published: 17 September 2018
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Physics (York)
Depositing User: Pure (York)
Date Deposited: 25 Sep 2018 10:50
Last Modified: 11 Apr 2020 23:18
Published Version: https://doi.org/10.1103/PhysRevB.98.115304
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1103/PhysRevB.98.115304

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Description: supplemental: Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices

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