Kumar, A. and De Souza, M.M. orcid.org/0000-0002-7804-7154 (2016) Theoretical modelling of 2DHG in Oxide/GaN/AlGaN/GaN heterostructures. In: Book of abstracts UK semiconductors. UK Semiconductors 2016, 06-07 Jul 2016, Sheffield, UK. .
Metadata
Authors/Creators: |
|
||||
---|---|---|---|---|---|
Copyright, Publisher and Additional Information: | © UK Semiconductors 2016 | ||||
Dates: |
|
||||
Institution: | The University of Sheffield | ||||
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) | ||||
Funding Information: |
|
||||
Depositing User: | Symplectic Sheffield | ||||
Date Deposited: | 15 Jun 2018 10:09 | ||||
Last Modified: | 19 Dec 2022 13:49 | ||||
Status: | Published | ||||
Refereed: | Yes |
Download
Filename: Theoretical Modelling of 2DHG in oxide-GaN-AlGaN-GaN heterostructures.pdf