Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors

Balakrishna Pillai, P. orcid.org/0000-0001-7272-9923, Kumar, A., Song, X. et al. (1 more author) (2018) Diffusion-Controlled Faradaic Charge Storage in High-Performance Solid Electrolyte-Gated Zinc Oxide Thin-Film Transistors. ACS Applied Materials and Interfaces, 10 (11). pp. 9782-9791. ISSN 1944-8244

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Copyright, Publisher and Additional Information: © 2018 ACS. This is an author produced version of a paper subsequently published in ACS Applied Materials and Interfaces. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: ionic diffusion; oxygen vacancies; synaptic memory; tantalum oxide; thin-film transistors
Dates:
  • Published: 7 March 2018
  • Accepted: 20 February 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 04 Apr 2018 12:07
Last Modified: 07 Mar 2019 01:39
Published Version: https://doi.org/10.1021/acsami.7b14768
Status: Published online
Publisher: American Chemical Society
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsami.7b14768
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