High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

Chen, C., Holmes, S.N., Farrer, I. orcid.org/0000-0002-3033-4306 et al. (2 more authors) (2018) High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice. Journal of Physics: Condensed Matter, 30 (10). 105705. ISSN 0953-8984



Copyright, Publisher and Additional Information: © 2018 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in Journal of Physics: Condensed Matter. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: InAs phonon; In0.75Ga0.25As; magnet-phonon resonance; scattering
  • Published (online): 19 January 2018
  • Published: 14 March 2018
  • Accepted: 19 January 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 12 Mar 2018 13:57
Last Modified: 19 Jan 2019 01:38
Published Version: https://doi.org/10.1088/1361-648X/aaa947
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-648X/aaa947
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