Chen, C., Holmes, S.N., Farrer, I. orcid.org/0000-0002-3033-4306 et al. (2 more authors) (2018) High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice. Journal of Physics: Condensed Matter, 30 (10). 105705. ISSN 0953-8984
Abstract
InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2V-1s-1at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1that dominates the polar-optical mode scattering from ∼70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2018 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in Journal of Physics: Condensed Matter. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | InAs phonon; In0.75Ga0.25As; magnet-phonon resonance; scattering |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 12 Mar 2018 13:57 |
Last Modified: | 19 Jan 2019 01:38 |
Published Version: | https://doi.org/10.1088/1361-648X/aaa947 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/1361-648X/aaa947 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:128422 |