Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT

Luo, P., Long, H.Y., Sweet, M.R. et al. (2 more authors) (2018) Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT. IEEE Transactions on Electron Devices. ISSN 0018-9383

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2018 IEEE. This is an author produced version of a paper subsequently published in IEEE Transactions on Electron Devices. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: IGBT; Clustered IGBT; Vce(sat) -Eoff trade-of; power semiconductor device; scaling rule; short circuit capability; self-clamping feature
Dates:
  • Accepted: 14 February 2018
  • Published (online): 27 February 2018
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 16 Feb 2018 15:38
Last Modified: 15 Mar 2018 14:53
Published Version: https://doi.org/10.1109/TED.2018.2807318
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/TED.2018.2807318

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