Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi₂Te₃

Ghasemi, A, Kepaptsoglou, D, Galindo, PL et al. (3 more authors) (2017) Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi₂Te₃. NPG Asia Materials, 9. e402. ISSN 1884-4057

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Copyright, Publisher and Additional Information: © The Author(s) 2017. This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Keywords: Surfaces, interfaces and thin films; Topological insulators
Dates:
  • Published: 7 July 2017
  • Accepted: 8 May 2017
  • Published (online): 7 July 2017
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Chemical & Process Engineering (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 04 Jan 2018 11:08
Last Modified: 04 Jan 2018 11:08
Status: Published
Publisher: Springer Nature
Identification Number: https://doi.org/10.1038/am.2017.111

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