Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes

Petticrew, J.D. orcid.org/0000-0003-3424-2457, Dimler, S.J., Zhou, X. et al. (3 more authors) (2017) Avalanche Breakdown Timing Statistics for Silicon Single Photon Avalanche Diodes. IEEE Journal of Selected Topics in Quantum Electronics, 24 (2). ISSN 1077-260X

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Authors/Creators:
Copyright, Publisher and Additional Information: This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/.
Keywords: Avalanche breakdown; avalanche photodiodes; impact ionization; jitter; silicon
Dates:
  • Published: 4 December 2017
  • Accepted: 1 December 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
SCIENCE AND TECHNOLOGY FACILITIES COUNCILST/F50334X/1
SCIENCE AND TECHNOLOGY FACILITIES COUNCILST/N000145/1
Depositing User: Symplectic Sheffield
Date Deposited: 03 Jan 2018 11:02
Last Modified: 28 Jun 2018 13:20
Published Version: https://doi.org/10.1109/JSTQE.2017.2779834
Status: Published online
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
Identification Number: https://doi.org/10.1109/JSTQE.2017.2779834

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