Hong, Jinhua, Wang, Cong, Liu, Hongjun et al. (9 more authors) (2017) Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2. Nano Letters. pp. 6653-6660. ISSN 1530-6984
Abstract
Interlayer rotation and stacking were recently demonstrated as effective strategies for tuning physical properties of various two-dimensional materials. The latter strategy was mostly realized in heterostructures with continuously varied stacking orders, which obscure the revelation of the intrinsic role of a certain stacking order in its physical properties. Here, we introduce inversion-domain-boundaries into molecular-beam-epitaxy grown MoSe2 homobilayers, which induce uncommon fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences. Low-symmetry stacking orders were observed using scanning transmission electron microscopy and detailed geometries were identified by density functional theory. A linear relation was also revealed between interlayer distance and stacking energy. These stacking sequences yield various energy alignments between the valence states at the Γ and K points of the Brillouin zone, showing stacking-dependent bandgaps and valence band tail states in the measured scanning tunneling spectroscopy. These results may benefit the design of two-dimensional multilayers with manipulable stacking orders.
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 American Chemical Society. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details |
Keywords: | Journal Article |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 11 Dec 2017 11:20 |
Last Modified: | 05 Feb 2024 00:29 |
Published Version: | https://doi.org/10.1021/acs.nanolett.7b02600 |
Status: | Published |
Refereed: | Yes |
Identification Number: | https://doi.org/10.1021/acs.nanolett.7b02600 |
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