Comparative study of image contrast in scanning electron microscope and helium ion microscope

Abstract

Images of Ga(+) -implanted amorphous silicon layers in a 110 n-type silicon substrate have been collected by a range of detectors in a scanning electron microscope and a helium ion microscope. The effects of the implantation dose and imaging parameters (beam energy, dwell time, etc.) on the image contrast were investigated. We demonstrate a similar relationship for both the helium ion microscope Everhart-Thornley and scanning electron microscope Inlens detectors between the contrast of the images and the Ga(+) density and imaging parameters. These results also show that dynamic charging effects have a significant impact on the quantification of the helium ion microscope and scanning electron microscope contrast.

Metadata

Authors/Creators:

O'Connell, R.
Chen, Y.
Zhang, H. https://orcid.org/0000-0002-1188-7810
Zhou, Y.
Fox, D.
Maguire, P.
Wang, J.J.
Rodenburg, C.

This is the peer reviewed version of the following article: O'CONNELL, R., CHEN, Y., ZHANG, H., ZHOU, Y., FOX, D., MAGUIRE, P., WANG, J.J. and RODENBURG, C. (2017), Comparative study of image contrast in scanning electron microscope and helium ion microscope. Journal of Microscopy, 268: 313–320, which has been published in final form at https://doi.org/10.1111/jmi.12660. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.

Keywords:

Charging effect; contrast reversal; helium ion microscope; scanning electron microscope; secondary electrons

Dates: