Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range

Avrutin, Eugene orcid.org/0000-0001-5488-3222, Ryvkin, Boris and Kostamovaara, Juha Tapio (2017) Strong Doping of the n-Optical Confinement Layer for Increasing Output Power of High- Power Pulsed Laser Diodes in the Eye Safe Wavelength Range. Semiconductor science and technology. 125008. ISSN 0268-1242

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Copyright, Publisher and Additional Information: © 2017 IOP Publishing Ltd. This is an author-produced version of the published paper. Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details
Keywords: high power lasers,laser efficiency,laser theory,semiconductor lasers,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electrical and Electronic Engineering,Materials Chemistry
Dates:
  • Published: 31 October 2017
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User: Pure (York)
Date Deposited: 10 Nov 2017 10:12
Last Modified: 14 Nov 2019 12:01
Published Version: https://doi.org/10.1088/1361-6641/aa92fd
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6641/aa92fd
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