GaAsBi: An Alternative to InGaAs Based Multiple Quantum Well Photovoltaics

Richards, R.D. orcid.org/0000-0001-7043-8372, Harun, F., Cheong, J.S. et al. (6 more authors) (2016) GaAsBi: An Alternative to InGaAs Based Multiple Quantum Well Photovoltaics. In: Proceedings of the 43rd Photovoltaic Specialists Conference (PVSC) 2016. Photovoltaic Specialists Conference (PVSC), 05-10 Jun 2016, Portland, OR, USA. IEEE , pp. 1135-1137.

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © 2017 IEEE.
Keywords: bismuth compounds; gallium arsenide; quantum well devices; photovoltaic cells
Dates:
  • Published: 21 November 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Sciences Research CouncilEP/M506618/1
Depositing User: Symplectic Sheffield
Date Deposited: 25 Oct 2017 14:36
Last Modified: 19 Dec 2022 13:37
Published Version: https://doi.org/10.1109/PVSC.2016.7749791
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: https://doi.org/10.1109/PVSC.2016.7749791
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