Investigation of a temperature tolerant InGaP (GaInP) converter layer for a Ni-63 betavoltaic cell

Butera, S., Whitaker, M.D.C., Krysa, A.B. orcid.org/0000-0001-8320-7354 et al. (1 more author) (2017) Investigation of a temperature tolerant InGaP (GaInP) converter layer for a Ni-63 betavoltaic cell. Journal of Physics D: Applied Physics, 50. 345101. ISSN 0022-3727

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Copyright, Publisher and Additional Information: © 2017 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Keywords: InGaP; betavoltaic; semiconductors
Dates:
  • Published: 2 August 2017
  • Accepted: 26 June 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 14 Sep 2017 14:45
Last Modified: 14 Sep 2017 14:45
Published Version: https://doi.org/10.1088/1361-6463/aa7bc5
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-6463/aa7bc5
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