Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices

Richards, R.D. orcid.org/0000-0001-7043-8372, Mellor, A., Harun, F. et al. (7 more authors) (2017) Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices. Solar Energy Materials and Solar Cells, 172. pp. 238-243. ISSN 0927-0248

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/BY-NC-ND/4.0/).
Keywords: GaAsBi; MQWs; Multijunction; IQE; InGaAs
Dates:
  • Accepted: 20 July 2017
  • Published (online): 4 September 2017
  • Published: 1 December 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
Engineering and Physical Sciences Research CouncilEP/M506618/1
Depositing User: Symplectic Sheffield
Date Deposited: 25 Aug 2017 12:56
Last Modified: 01 Nov 2018 12:17
Published Version: https://doi.org/10.1016/j.solmat.2017.07.029
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.solmat.2017.07.029

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