Extending the bounds of performance in E-mode p-channel GaN MOSHFETs

Kumar, A. orcid.org/0000-0002-8288-6401 and De Souza, M.M. (2016) Extending the bounds of performance in E-mode p-channel GaN MOSHFETs. In: 2016 IEEE International Electron Devices Meeting (IEDM). 2016 IEEE International Electron Devices Meeting, 3-7 Dec 2016, San Francisco, CA, USA. IEEE . ISBN 978-1-5090-3901-2

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Copyright, Publisher and Additional Information: © 2017, IEEE. This is an author produced version of a paper subsequently published in Electron Devices Meeting (IEDM), 2016 IEEE International. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published (online): 2 February 2017
  • Published: 3 December 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENIAC296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 31 Jul 2017 14:11
Last Modified: 03 Aug 2017 04:46
Published Version: https://doi.org/10.1109/IEDM.2016.7838368
Status: Published
Publisher: IEEE
Refereed: Yes
Identification Number: https://doi.org/10.1109/IEDM.2016.7838368
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