Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices

Bean, Jonathan J, Saito, Mitsuhiro, Fukami, Shunsuke et al. (5 more authors) (2017) Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices. Scientific Reports. 45594. ISSN 2045-2322

Abstract

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Authors/Creators:
Copyright, Publisher and Additional Information: © The Author(s) 2017
Keywords: Journal Article
Dates:
  • Accepted: 27 February 2017
  • Published: 4 April 2017
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Physics (York)
Funding Information:
FunderGrant number
EPSRCEP/K003151/1
Depositing User: Pure (York)
Date Deposited: 30 Jun 2017 09:00
Last Modified: 06 Dec 2023 11:56
Published Version: https://doi.org/10.1038/srep45594
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1038/srep45594

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