Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices

Bean, Jonathan J, Saito, Mitsuhiro, Fukami, Shunsuke et al. (5 more authors) (2017) Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices. Scientific Reports. 45594. ISSN 2045-2322

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © The Author(s) 2017
Keywords: Journal Article
Dates:
  • Published: 4 April 2017
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Physics (York)
Depositing User: Pure (York)
Date Deposited: 30 Jun 2017 09:00
Last Modified: 05 Jan 2020 05:23
Published Version: https://doi.org/10.1038/srep45594
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1038/srep45594

Download

Share / Export

Statistics