(11-22) semi-polar GaN is expected to exhibit major advantages compared with current c-plane polar GaN in the fabrication of long wavelength such as green and yellow emitters. However, all the III-nitride based semi-/non- polar laser diodes (LDs) reported so far have been achieved exclusively based on homo-epitaxial growth on extremely expensive free-standing GaN substrates with a very limited size. In this paper, we have observed a stimulated emission at room temperature achieved on our semi-polar (11-22) GaN overgrown on a micro-rod arrayed template with an optimized design on m-plane sapphire. This has never been achieved previously on any semi-polar GaN grown on sapphire. Furthermore, an optical gain of 130cm−1 has been measured by means of performing a standard laser stripe-length dependent optical measurement. The values of the threshold and the optical gain obtained are comparable to those of the c-plane GaN reported so far, further validating the satisfactory crystal quality of our overgrown semi-polar (11-22) GaN on sapphire. This represents a major step towards the development of III-nitride semi-polar based LDs on sapphire, especially in the long wavelength regime.
CORE (COnnecting REpositories)
CORE (COnnecting REpositories)