Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis

Unni, V. and Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 (2017) Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis. In: Japanese Journal of Applied Physics. 2016 International Conference on Solid State Devices and Materials (SSDM2016), 26/09/2016 - 29/09/2016, Tsukuba, Japan. Japan Society of Applied Physics .

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Copyright, Publisher and Additional Information: © 2017 The Japan Society of Applied Physics. This is an author produced version of a paper subsequently published in Japanese Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: April 2017
  • Published (online): 14 February 2017
  • Accepted: 7 December 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)UNSPECIFIED
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)UNSPECIFIED
Depositing User: Symplectic Sheffield
Date Deposited: 04 May 2017 15:32
Last Modified: 14 Feb 2018 01:39
Published Version: https://doi.org/10.7567/JJAP.56.04CG02
Status: Published
Publisher: Japan Society of Applied Physics
Refereed: Yes
Identification Number: https://doi.org/10.7567/JJAP.56.04CG02

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