Tonndorf, P., Schwarz, S., Kern, J. et al. (9 more authors) (2017) Single-photon emitters in GaSe. 2D Materials, 4 (2). 021010.
Abstract
Single-photon sources are important building blocks for quantum information technology. Emitters based on solid-state systems provide a viable route to integration in photonic devices. Here, we report on single-photon emitters in the layered semiconductor GaSe. We identify the exciton and biexciton transition of the quantum emitters with power-dependent photoluminescence and photon statistics measurements. We find evidence that the localization of the excitons is related to deformations of the GaSe crystal, caused by nanoscale selenium inclusions, which are incorporated in the crystal. These deformations give rise to local strain fields, which induce confinement potentials for the excitons. This mechanism lights the way for the controlled positioning of single-photon emitters in GaSe on the nanoscale.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in 2D Materials. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | Single-photon emitter; layered semiconductor; transition metal monochalcogenide; GaSe; biexciton; strain |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Funding Information: | Funder Grant number EUROPEAN COMMISSION - FP6/FP7 S^3NANO - 289795 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC) EP/M012727/1 EUROPEAN COMMISSION - HORIZON 2020 676108 EUROPEAN COMMISSION - HORIZON 2020 649953 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 03 May 2017 09:56 |
Last Modified: | 01 Feb 2018 01:39 |
Published Version: | https://doi.org/10.1088/2053-1583/aa525b |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.1088/2053-1583/aa525b |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:115773 |