Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2

Roberts, T.S. orcid.org/0000-0002-9243-2251, Stevens, B.J., Clarke, E. orcid.org/0000-0002-8287-0282 et al. (8 more authors) (2016) Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2. In: International Semiconductor Laser Conference (ISLC). International Semiconductor Laser Conference (ISLC), 12/09/2016 - 15/09/2016, Kobe, Japan. Institute of Electrical and Electronics Engineers . ISBN 9784885523069

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Keywords: Strain; Epitaxial growth; Epitaxial layers; Stacking; Quantum dot lasers
Dates:
  • Published (online): 5 December 2016
  • Published: 5 December 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 04 Apr 2017 16:04
Last Modified: 21 Mar 2018 17:46
Published Version: http://ieeexplore.ieee.org/abstract/document/77658...
Status: Published
Publisher: Institute of Electrical and Electronics Engineers
Refereed: Yes
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