Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well

Taneja, D., Shlimak, I., Narayan, V. orcid.org/0000-0002-0813-2572 et al. (3 more authors) (2017) Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well. Journal of Physics: Condensed Matter, 29 (18). 185302. ISSN 0953-8984

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Copyright, Publisher and Additional Information: © 2017 IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI
Keywords: metal-insulator transition; non-linear I-V characteristics; two-dimensional hole gas
Dates:
  • Accepted: 7 March 2017
  • Published (online): 31 March 2017
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 06 Apr 2017 13:29
Last Modified: 06 Apr 2017 13:29
Published Version: https://doi.org/10.1088/1361-648X/aa6529
Status: Published online
Publisher: IOP Publishing
Refereed: Yes
Identification Number: https://doi.org/10.1088/1361-648X/aa6529
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