Siciliani de Cumis, U., Waldie, J., Croxall, A.F. et al. (5 more authors) (2017) A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers. Applied Physics Letters, 110 (7). 072105. ISSN 0003-6951
Abstract
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration, we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices, we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2017 The Authors. This is an author produced version of a paper subsequently published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 15 Mar 2017 12:04 |
Last Modified: | 14 Feb 2018 01:39 |
Published Version: | https://doi.org/10.1063/1.4976505 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/1.4976505 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:113226 |