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Symmetry of k·p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure

Vukmirovic, N., Indjin, D., Jovanovic, V.D., Ikonic, Z. and Harrison, P. (2005) Symmetry of k·p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure. Physical Review B: Condensed Matter and Materials Physics, 72 (7). 075356(10). ISSN 1550-235X

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Abstract

A method for the calculation of the electronic structure of pyramidal self-assembled InAs/GaAs quantum dots is presented. The method is based on exploiting the C-4 symmetry of the 8-band k·p Hamiltonian with the strain taken into account via the continuum mechanical model. The operators representing symmetry group elements were represented in the plane wave basis and the group projectors were used to find the symmetry adapted basis in which the corresponding Hamiltonian matrix is block diagonal with four blocks of approximately equal size. The quantum number of total quasiangular momentum is introduced and the states are classified according to its value. Selection rules for interaction with electromagnetic field in the dipole approximation are derived. The method was applied to calculate electron and hole quasibound states in a periodic array of vertically stacked pyramidal self-assembled InAs/GaAs quantum dots for different values of the distance between the dots and external axial magnetic field. As the distance between the dots in an array is varied, an interesting effect of simultaneous change of ground hole state symmetry, type, and the sign of miniband effective mass is predicted. This effect is explained in terms of the change of biaxial strain. It is also found that the magnetic field splitting of Kramer's double degenerate states is most prominent for the first and second excited state in the conduction band and that the magnetic field can both separate otherwise overlapping minibands and concatenate otherwise nonoverlapping minibands.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2005 The American Physical Society. This is an author produced version of a paper published in Physical Review B: Condensed Matter and Materials Physics.
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Repository Officer
Date Deposited: 22 Mar 2006
Last Modified: 08 Feb 2013 17:02
Published Version: http://link.aps.org/abstract/PRB/v72/e075356
Status: Published
Refereed: Yes
Identification Number: 10.1103/PhysRevB.72.075356
URI: http://eprints.whiterose.ac.uk/id/eprint/1111

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