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Electric field domains in p-Si/SiGe quantum cascade structures

Ikonic, Z., Harrison, P. and Kelsall, R.W. (2006) Electric field domains in p-Si/SiGe quantum cascade structures. IEEE Transactions on Electron Devices, 53 (2). pp. 189-195. ISSN 0018-9383

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The formation of domains in quantum cascade structures is one of the mechanisms strongly affecting the operation of quantum cascade lasers, quantum-well infrared detectors, and other devices. In this paper, we consider the problem of domain formation in p-doped Si/SiGe quantum cascades, using a carrier scattering transport framework. In effect, the hole flow along the cascade is described via scattering between quantized states belonging to neighboring periods, caused by phonons, alloy disorder, and carrier-carrier interactions. The generation of either periodic or of nonperiodic domains is studied in uniformly doped cascades, as well as the influence of modulation doping of cascades on the domain formation.

Item Type: Article
Copyright, Publisher and Additional Information: Copyright © 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords: Domain formation, SiGe, quantum cascade structures
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User: Sherpa Assistant
Date Deposited: 22 Mar 2006
Last Modified: 05 Jun 2014 09:43
Published Version: http://dx.doi.org/10.1109/TED.2005.862498
Status: Published
Refereed: Yes
Identification Number: 10.1109/TED.2005.862498
URI: http://eprints.whiterose.ac.uk/id/eprint/1110

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