Wang, D.Q., Klochan, O., Hung, J-T. et al. (4 more authors) (2016) Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot. Nano Letters, 16 (12). pp. 7685-7689. ISSN 1530-6984
Abstract
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyper- fine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here we present electrical transport measurements on holes in a gate-defined double quantum dot in a GaAs/AlxGa1−xAs heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://doi.org/10.1021/acs.nanolett.6b03752. |
Keywords: | III-V semiconductor; quantum dot; heavy hole; spin-orbit interaction; Pauli spin blockade |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 31 Jan 2017 13:46 |
Last Modified: | 24 Nov 2017 01:38 |
Published Version: | http://doi.org/10.1021/acs.nanolett.6b03752 |
Status: | Published |
Publisher: | American Chemical Society |
Refereed: | Yes |
Identification Number: | 10.1021/acs.nanolett.6b03752 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:110979 |