Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission

Evans, C.A., Jovanovic, V.D., Indjin, D., Ikonic, Z. and Harrison, P. (2005) Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission. Applied Physics Letters, 87 (141109). ISSN 0003-6951

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Abstract

The design and simulation of an In-0.53Ga-0.47As/Al-0.56As-0.44Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of ~20% at 77 K and sufficient gain to achieve room-temperature laser emission at λ ~2.8 µm. Threshold currents in the range 4–8 kA/cm2 are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing λ ~3.1 µm In-0.53Ga-0.47As/Al-0.56As-0.44Sb quantum-cascade structure presented in the literature.

Item Type:	Article
Copyright, Publisher and Additional Information:	Copyright © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This is an author produced version of a paper which was subequently published in Applied Physics Letters.
Academic Units:	The University of Leeds > Faculty of Engineering (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Institute of Microwaves and Photonics (Leeds)
Depositing User:	Repository Officer
Date Deposited:	22 Mar 2006
Last Modified:	08 Feb 2013 17:02
Published Version:	http://link.aip.org/link/APPLAB/v87/p141109
Status:	Published
Refereed:	Yes
Identification Number:	10.1063/1.2067701
URI:	http://eprints.whiterose.ac.uk/id/eprint/1109

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