Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

Balakrishna Pillai, P. orcid.org/0000-0001-7272-9923 and De Souza, M.M. (2016) Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide. ACS Applied Materials and Interfaces . ISSN 1944-8244

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2016 American Chemical Society. This is an author produced version of a paper subsequently published in ACS Applied Materials and Interfaces. Uploaded in accordance with the publisher's self-archiving policy.
Keywords: zinc oxide; synaptic thin film transistors; tantalum oxide; oxygen vacancies; memory TFTs
Dates:
  • Published (online): 19 December 2016
  • Accepted: 19 December 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENIAC296131-1
Depositing User: Symplectic Sheffield
Date Deposited: 10 Jan 2017 15:16
Last Modified: 19 Dec 2017 01:38
Published Version: https://doi.org/10.1021/acsami.6b13746
Status: Published online
Publisher: American Chemical Society
Refereed: Yes
Identification Number: https://doi.org/10.1021/acsami.6b13746
Related URLs:

Share / Export

Statistics