Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs

Chatterjee, I., Uren, M.J., Pooth, A. et al. (9 more authors) (2016) Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs. In: 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). 2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 17-21 April 2016, Pasadena, USA. IEEE .

Abstract

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Authors/Creators:
  • Chatterjee, I.
  • Uren, M.J.
  • Pooth, A.
  • Karboyan, S.
  • Martin-Horcajo, S.
  • Kuball, M.
  • Lee, K.B.
  • Zaidi, Z.
  • Houston, P.A.
  • Wallis, D.J.
  • Guiney, I.
  • Humphreys, C.J.
Copyright, Publisher and Additional Information: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Keywords: Field effect transistors; HEMTs; microwave transistors; power transistors; current collapse; dynamic R-ON
Dates:
  • Published: 26 September 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
FunderGrant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL (EPSRC)UNSPECIFIED
Depositing User: Symplectic Sheffield
Date Deposited: 13 Jan 2017 15:17
Last Modified: 13 Jan 2017 15:17
Published Version: https://doi.org/10.1109/IRPS.2016.7574529
Status: Published
Publisher: IEEE
Identification Number: doi.org/10.1109/IRPS.2016.7574529
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