Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111) : Co2FeSi0.5Al0.5/Ge(111)

Nedelkoski, Zlatko, Kuerbanjiang, Balati orcid.org/0000-0001-6446-8209, Glover, Stephanie E et al. (12 more authors) (2016) Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111) : Co2FeSi0.5Al0.5/Ge(111). Scientific Reports. 37282. p. 37282. ISSN 2045-2322

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © The Author(s) 2016
Dates:
  • Published: 21 November 2016
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Physics (York)
The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User: Pure (York)
Date Deposited: 24 Nov 2016 16:25
Last Modified: 16 Jul 2019 23:19
Published Version: https://doi.org/10.1038/srep37282
Status: Published
Refereed: Yes
Identification Number: https://doi.org/10.1038/srep37282
Related URLs:

Download

Filename: srep37282.pdf

Description: srep37282

Licence: CC-BY 2.5

Share / Export

Statistics