Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments–ATLAS12 design and initial results

Unno, Y., Edwards, S.O., Pyatt, S. et al. (10 more authors) (2014) Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments–ATLAS12 design and initial results. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 765. pp. 80-90. ISSN 0168-9002

Abstract

Metadata

Authors/Creators:
Copyright, Publisher and Additional Information: © 2014 Elsevier.
Keywords: Silicon strip; n+-in-p; P-type; Radiation-tolerant; HL-LHCPTP
Dates:
  • Published: 21 November 2014
  • Published (online): 14 July 2014
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 20 Jun 2017 09:24
Last Modified: 20 Jun 2017 09:24
Published Version: http://doi.org/10.1016/j.nima.2014.06.086
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.nima.2014.06.086

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