Unno, Y., Edwards, S.O., Pyatt, S. et al. (10 more authors) (2014) Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments–ATLAS12 design and initial results. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 765. pp. 80-90. ISSN 0168-9002
Abstract
We have been developing a novel radiation-tolerant n+-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 μm and slim edge space of 450 μm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
Metadata
Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2014 Elsevier. |
Keywords: | Silicon strip; n+-in-p; P-type; Radiation-tolerant; HL-LHCPTP |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 20 Jun 2017 09:24 |
Last Modified: | 20 Jun 2017 09:24 |
Published Version: | http://doi.org/10.1016/j.nima.2014.06.086 |
Status: | Published |
Publisher: | Elsevier |
Refereed: | Yes |
Identification Number: | https://doi.org/10.1016/j.nima.2014.06.086 |