Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation

Unno, Y., Kamada, S., Yamamura, K. et al. (8 more authors) (2016) Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 831. pp. 122-132. ISSN 0168-9002

Abstract

Metadata

Authors/Creators:
  • Unno, Y.
  • Kamada, S.
  • Yamamura, K.
  • Ikegami, Y.
  • Nakamura, K.
  • Takubo, Y.
  • Takashima, R.
  • Tojo, J.
  • Kono, T.
  • Hanagaki, K.
  • et al,
Copyright, Publisher and Additional Information: © 2016 Elsevier.
Keywords: n-in-p; p-type; Pixel; Silicon; Radiation damage; HL-LHC
Dates:
  • Published: 21 September 2016
  • Accepted: 13 April 2016
  • Published (online): 23 April 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Science (Sheffield) > Department of Physics and Astronomy (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 21 Nov 2016 15:12
Last Modified: 21 Nov 2016 15:12
Published Version: http://doi.org/10.1016/j.nima.2016.04.039
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.nima.2016.04.039

Download not available

A full text copy of this item is not currently available from White Rose Research Online

Share / Export

Statistics