The world’s first high voltage GaN-on-Diamond power semiconductor devices

Baltynov, T., Unni, V. and Narayanan, E.M.S. (2016) The world’s first high voltage GaN-on-Diamond power semiconductor devices. Solid-State Electronics, 125. pp. 111-117. ISSN 0038-1101

Abstract

Metadata

Authors/Creators:
  • Baltynov, T.
  • Unni, V.
  • Narayanan, E.M.S.
Copyright, Publisher and Additional Information: © 2016 Elsevier
Keywords: AlGaN/GaN HEMT; GaN-on-Diamond; Circular HEMT; Breakdown voltage; Capacitance-voltage
Dates:
  • Published: 19 July 2016
  • Published (online): 19 July 2016
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 09 Nov 2016 14:20
Last Modified: 19 Jul 2017 13:28
Published Version: http://doi.org/10.1016/j.sse.2016.07.022
Status: Published
Publisher: Elsevier
Refereed: Yes
Identification Number: https://doi.org/10.1016/j.sse.2016.07.022

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